參數(shù)資料
型號: EDI8G32512V
英文描述: 512Kx32 Static RAM CMOS, High Speed Module(512Kx32 高速CMOS靜態(tài)RAM模塊)
中文描述: 512Kx32的CMOS靜態(tài)RAM,高速模塊(512Kx32高速的CMOS靜態(tài)內(nèi)存模塊)
文件頁數(shù): 1/6頁
文件大小: 69K
代理商: EDI8G32512V
EDI8G32512V
512Kx32 SRAM Module
1
EDI8G32512V Rev. 0 1/98 ECO #9696
A-A18
Address Inputs
E-E3
Chip Enables
W
Write Enable
G
Output Enable
DQ-DQ31
Common Data
Input/Output
VCC
Power (+3.3V±10%)
VSS
Ground
NC
No Connection
Features
512Kx32 bit CMOS Static
Random Access Memory
Access Times: 15, 17 and 20ns
Individual Byte Selects
Fully Static, No Clocks
TTL Compatible I/O
High Density Package
72 Pin ZIP, No. 173
72 lead SIMM, No. 174
Common Data Inputs and Outputs
Single +3.3V (±10%) Supply Operation
The EDI8G32512V is a high speed 16 megabit Static RAM
module organized as 512K words by 32 bits. This module is
constructed from four 512Kx8 Static RAMs in SOJ packages on
an epoxy laminate (FR4) board.
Four chip enables (E-E3) are used to independently enable
the four bytes. Reading or writing can be executed on individual
bytes or any combination of multiple bytes through proper use
of selects.
The EDI8G32512V is offered in gold plated 72 pin ZIP and 72
lead SIMM packages, which enable 16 megabits of memory to
be placed in less than 1.3 square inches of board space.
All inputs and outputs are TTL compatible and operate from a
single 3.3V supply. Fully asynchronous circuitry requires no
clocks or refreshing for operation and provides equal access
and cycle times for ease of use.
Pins PD1- PD4, are used to identify module memory density in
applications where alternate modules can be interchanged.
NC
PD3
VSS
PD2
DQ8
DQ9
DQ10
DQ11
A
A1
A2
DQ12
DQ13
DQ14
DQ15
VSS
A15
E1
E3
A17
G
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
VCC
A6
DQ28
DQ29
DQ30
DQ31
A18
NC
PD4
PD1
DQ
DQ1
DQ2
DQ3
VCC
A7
A8
A9
DQ4
DQ5
DQ6
DQ7
W
A14
E
E2
A16
VSS
DQ16
DQ17
DQ18
DQ19
A10
A11
A12
A13
DQ20
DQ21
DQ22
DQ23
VSS
NC
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
PD1, PD2,PD4 = Open
PD3 = VSS
A-A18
W
G
E
E1
E2
E3
DQ-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
19
8
Pin Configurations and Block Diagram
Pin Names
512Kx32 Static RAM
CMOS, High Speed Module
Electronic Designs Incorporated
One Research Drive Westborough, MA 01581 USA 508-366-5151 FAX 508-836-4850
http://www.electronic-designs.com
ADVANCED
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