參數(shù)資料
型號(hào): EDI88512CA25NB
英文描述: 270MHz Ultra-Accurate Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R
中文描述: x8的SRAM
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 152K
代理商: EDI88512CA25NB
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88128C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
VDD
VDD = 2.0V
2
V
Data Retention Quiescent Current
ICCDR
CS1
≥ VDD -0.2V
400
A
Chip Disable to Data Retention Time (1)
TCDR
VIN
≥ VDD -0.2V
0
ns
Operation Recovery Time (1)
TR
or VIN
≤ 0.2V
TAVAV*–
ns
NOTE:
1. Parameter guaranteed by design, but not tested.
* Read Cycle Time
DATA RETENTION CHARACTERISTICS (EDI88128LP & EDI88130LP ONLY)
(TA = -55
°C to +125°C)
WS32K32-XHX
FIG. 5
DATA RETENTION - CS1 CONTROLLED
DATA RETENTION, CS1 CONTROLLED
Data Retention Mode
tR
Vcc
CS1
tCDR
CS1
≥ VDD -0.2V
VDD
4.5V
WS32K32-XHX
FIG. 6
DATA RETENTION - CS2 CONTROLLED
DATA RETENTION, CS2 CONTROLLED
Data Retention Mode
tR
Vcc
CS2
tCDR
CS2
≤ 0.2V
VDD
4.5V
相關(guān)PDF資料
PDF描述
EDI88512CA25NC <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40&deg;C to 85&deg;C; Package: 10-MSOP
EDI88512CA25NI <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40&deg;C to 85&deg;C; Package: 10-MSOP T&amp;R
EDI88512CA25NM <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40&deg;C to 85&deg;C; Package: 10-MSOP T&amp;R
EDI88512CA25TB <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-SOIC
EDI88512CA25TC <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-SOIC T&amp;R
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDI88512CA25NC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
EDI88512CA25NI 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 25NS, 32 CSOJ, INDUSTRIAL SCRE - Bulk
EDI88512CA25NM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
EDI88512CA25TB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
EDI88512CA25TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM