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參數(shù)資料
| 型號： | EDI88512CA25N36C |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 152K |
| 代理商： | EDI88512CA25N36C |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88128C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
VDD
VDD = 2.0V
2
–
V
Data Retention Quiescent Current
ICCDR
CS1
≥ VDD -0.2V
–
400
A
Chip Disable to Data Retention Time (1)
TCDR
VIN
≥ VDD -0.2V
0
–
ns
Operation Recovery Time (1)
TR
or VIN
≤ 0.2V
TAVAV*–
–
ns
NOTE:
1. Parameter guaranteed by design, but not tested.
* Read Cycle Time
DATA RETENTION CHARACTERISTICS (EDI88128LP & EDI88130LP ONLY)
(TA = -55
°C to +125°C)
WS32K32-XHX
FIG. 5
DATA RETENTION - CS1 CONTROLLED
DATA RETENTION, CS1 CONTROLLED
Data Retention Mode
tR
Vcc
CS1
tCDR
CS1
≥ VDD -0.2V
VDD
4.5V
WS32K32-XHX
FIG. 6
DATA RETENTION - CS2 CONTROLLED
DATA RETENTION, CS2 CONTROLLED
Data Retention Mode
tR
Vcc
CS2
tCDR
CS2
≤ 0.2V
VDD
4.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDI88512CA25N36I | 270MHz Ultra-Accurate Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP |
| EDI88512CA25N36M | 270MHz Ultra-Accurate Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R |
| EDI88512CA25NB | 270MHz Ultra-Accurate Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R |
| EDI88512CA25NC | <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP |
| EDI88512CA25NI | <1mV Voltage Offset, 600MHz Amplifiers; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDI88512CA25N36I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| EDI88512CA25N36M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| EDI88512CA25NB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 25NS, 32 CSOJ, TINNED LEADS, M - Bulk |
| EDI88512CA25NC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| EDI88512CA25NI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 25NS, 32 CSOJ, INDUSTRIAL SCRE - Bulk |
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