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參數(shù)資料
| 型號(hào)： | EDI2GG43264V95D |
| 英文描述： | 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V，9.5ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
| 中文描述： | 4x64Kx32同步SRAM卡模塊（4x64Kx32，3.3伏，9.5ns，同步靜態(tài)內(nèi)存卡模塊（流通結(jié)構(gòu)）） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 217K |
| 代理商： | EDI2GG43264V95D |
EDI2GG43264V
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
DC ELECTRICAL CHARACTERISTICS - READ CYCLE
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS*
SYNCHRONOUS ONLY - TRUTH TABLE
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in operational sections of this
specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55
°C to +125°C
Operating Temperature (Commercial)
0
°C to +70°C
Operating Temperature (Industrial)
-40
°C to +85°C
Short Circuit Output Current
20 mA
Operation
E1\
E2\
E3\
E4\
GW\
G\
CLK
DQ
Synchronous Write-Bank 1
L
H
L
H
↑
High-Z
Synchronous Read-Bank 1
L
H
L
↑
Synchronous Write-Bank 2
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 2
H
L
H
L
↑
Synchronous Write-Bank 3
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 3
H
L
H
L
↑
Synchronous Write-Bank 4
H
L
H
↑
High-Z
Synchronous Read-Bank 4
H
L
H
L
↑
Snooze Mode
X
High-Z
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC
3.14
3.3
3.6
V
Supply Voltage
VSS
0.0
V
Input High
VIH
2.2
3.0
VCC +0.3
V
Input Low
VIL
-0.3
0.0
0.8
V
Input Leakage
ILI
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
Output High (IOH = -4mA)
VOH
2.4
-
V
Output Low (IOL = 8mA)
VOL
--
0.4
V
Max
Description
Symbol
Typ
9.5
10
11
12
15
Units
Power Supply Current
Icc1
195
*
480
420
385
mA
Power Supply Current
Icc
80
*
300
270
mA
Device Selected,No Operation
Snooze Mode
IccZZ
4
*
20
mA
CMOS Standby
Icc3
60
*
100
mA
Clock Running-Deselect
IccK
80
*
3000
300
270
mA
*TBD
AC TEST CIRCUIT
AC TEST CONDITIONS
50
Vt = 1.5V
Output
Z0 = 50
Z0 = 50
Parameter
I/O
Unit
Input Pulse Levels
VSS to 3.0
V
Input and Output Timing Levels
1.25
V
Output Test Equivalencies
See figure, at left
AC Output Load Equivalent
1.25V
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