參數(shù)資料
型號: EDI2GG43264V10D
英文描述: 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V,10ns,同步靜態(tài)RAM卡模塊(流通結構))
中文描述: 4x64Kx32同步SRAM卡模塊(4x64Kx32,3.3伏,10納秒,同步靜態(tài)內(nèi)存卡模塊(流通結構))
文件頁數(shù): 3/8頁
文件大?。?/td> 217K
代理商: EDI2GG43264V10D
EDI2GG43264V
3
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
G\
GW\
E1\
GW\
G\
E\
DQ
64Kx32
GW\
G\
E\
DQ
64Kx32
E3\
GW\
G\
E\
DQ
64Kx32
GW\
G\
E\
DQ
64Kx32
E2\
E4\
DQ0-31
CLK
A0-15
FUNCTIONAL BLOCK DIAGRAM
DQ0-32
Input/Output Bus
A0-15
Address Bus
E1-4\
Synchronous Bank Enables
CLK
Array Clock
GW\
Synchronous Global Write
Enable
G\
Asynchronous Output Enable
Vcc
3.3V Power Supply
Vss
Ground
NC
No Connect
PIN NAMES
PIN DESCRIPTIONS
DIMM Pins
Symbol
Type
Description
3, 5, 7, 9, 13, 15,
A0-15
Input
Addresses: These inputs are registered and must meet the setup and hold times around the rising edge of CLK.
17, 19, 20, 23, 18,
Synchronous
The burst counter generates internal addresses associated with A0 and A1, during burst and wait cycle.
16, 14, 10, 8, 6
38
GW\
Input
Global Write: This active LOW input allows a full 72-bit WRITE to occur independent of the BWE\ and BWx\ lines
Synchronous
and must meet the setup and hold times around the rising edge of CLK.
27
CLK
Input
Clock: This signal registers the addresses, data, chip enables, write control and burst control inputs on its rising
Synchronous
edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge.
36, 32
E1, E2\
Input
Bank Enables: These active LOW inputs are used to enable each individual bank andto gate ADSP\.
35, 31
E3\, E4\
Synchronous
37
G\
Input
Output Enable: This active LOW asynchronous input enables the data output drivers.
Various
DQ0-32
Input/Output
Data Inputs/Outputs: First byte is DQ0-7, second byte is DQ8-15, third byte is DQ16-23, fourth byte is DQ24-31, fifth
byte is DQ32-39, sixth byte is DQ40-47, seventh byte is DQ48-55 and the eight byte is DQ56-64.
Various
Vcc
Supply
Core power supply: +3.3V -5%/+10%
Various
Vss
Ground
相關PDF資料
PDF描述
EDI2GG43264V11D 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V,11ns,同步靜態(tài)RAM卡模塊(流通結構))
EDI2GG43264V15D 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V,15ns,同步靜態(tài)RAM卡模塊(流通結構))
EDI2GG43264V95D 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V,9.5ns,同步靜態(tài)RAM卡模塊(流通結構))
EDI2GG464128V-D SSRAM Modules
EDI2GG464128V10D 4x128Kx64 Synchronous SRAM Card Module(4x128Kx64, 3.3V,10ns,同步靜態(tài)RAM卡模塊(流通結構))
相關代理商/技術參數(shù)
參數(shù)描述
EDI2GG464128V 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM
EDI2GG464128V10D 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM
EDI2GG464128V11D 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM
EDI2GG464128V12D 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM
EDI2GG464128V15D 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM