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| 型號： | EDI2GG432128V10D |
| 英文描述： | 4x128Kx32 Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V，10ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
| 中文描述： | 4x128Kx32同步流通過的SRAM卡模塊（4x128Kx18，3.3伏，10納秒，同步靜態(tài)內(nèi)存卡模塊（流通結(jié)構(gòu)）） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 170K |
| 代理商： | EDI2GG432128V10D |
EDI2GG432128V
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
DC ELECTRICAL CHARACTERISTICS - READ CYCLE
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS*
SYNCHRONOUS ONLY - TRUTH TABLE
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in operational sections of this specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55
°C to +125°C
Operating Temperature (Commercial)
0
°C to +70°C
Operating Temperature (Industrial)
-40
°C to +85°C
Short Circuit Output Current
20 mA
Operation
E1\
E2\
E3\
E4\
GW\
G\
CLK
DQ
Synchronous Write-Bank 1
L
H
L
H
↑
High-Z
Synchronous Read-Bank 1
L
H
L
↑
Synchronous Write-Bank 2
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 2
H
L
H
L
↑
Synchronous Write-Bank 3
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 3
H
L
H
L
↑
Synchronous Write-Bank 4
H
L
H
↑
High-Z
Synchronous Read-Bank 4
H
L
H
L
↑
Snooze Mode
X
High-Z
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC
3.14
3.3
3.6
V
Supply Voltage
VSS
0.0
V
Input High
VIH
2.2
3.0
VCC +0.3
V
Input Low
VIL
-0.3
0.0
0.8
V
Input Leakage
ILI
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
Output High (IOH = -4mA) VOH
2.4
-
V
Output Low (IOL = 8mA)
VOL
-
0.4
V
Max
Description
Symbol
Typ
9.5
10
11
12
15
Units
Power Supply Current
Icc1
0.78
*
1.1
1.0
A
Power Supply Current
Icc
325
*
760
500
mA
Device Selected,No Operation
Snooze Mode
IccZZ
80
*
120
mA
CMOS Standby
Icc3
200
*
360
mA
Clock Running-Deselect
IccK
300
*
550
500
380
350
mA
*TBD
AC TEST CIRCUIT
AC TEST CONDITIONS
50
Vt = 1.5V
Output
Z0 = 50
Z0 = 50
Parameter
I/O
Unit
Input Pulse Levels
VSS to 3.0
V
Input and Output Timing Levels
1.25
V
Output Test Equivalencies
See figure, at left
AC Output Load Equivalent
1.25V
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| EDI2GG43264V10D | 4x64Kx32 Synchronous SRAM Card Module(4x64Kx32, 3.3V，10ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDI2GG464128V | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V10D | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V11D | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V12D | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V15D | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
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