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參數(shù)資料
| 型號： | EDF1DM |
| 廠商： | GE Security, Inc. |
| 英文描述： | MINIATURE GLASS PASSIVATED FAST EFFICIENT BRIDGE RECTIFIER |
| 中文描述： | 微型玻璃鈍化快速高效橋式整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | EDF1DM |
EDF1AM THRU EDF1DM
MINIATURE GLASS PASSIVATED FAST EFFICIENT BRIDGE RECTIFIER
Reverse Voltage -
50 to 200 Volts
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
This series is UL listed under Recognized Component Index,
file number E54214
Glass passivated chip junctions
High forward surge current capability
Ideal for printed circuit boards
Superfast recovery times for high efficiency
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on body
Mounting Position:
Any
Weight:
0.04 ounce, 1.0 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EDF1AM
EDF1BM
EDF1CM
EDF1DM
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
rectified current at T
A
=40°C
Peak forward surge current single half sine-wave super-
imposed on rated load (JEDEC Method) T
J
=150°C
Rating for fusing (t < 8.3ms)
Maximum instantaneous forward voltage drop
per leg at 1.0A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
(NOTE 1)
Typical thermal resistance per leg
(NOTE 2)
V
RRM
V
RMS
V
DC
50
35
50
100
70
100
150
106
150
200
140
200
Volts
Volts
Volts
I
(AV)
1.0
Amp
I
FSM
50.0
Amps
I
2
t
10.0
A
2
sec
V
F
1.05
Volts
T
A
=25°C
T
A
=125°C
5.0
1.0
50.0
38.0
12.0
μ
A
mA
ns
I
R
t
rr
R
Θ
JA
R
Θ
JL
T
J
, T
STG
°C/W
Operating junction and storage temperature range
-55 to +150
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.51 x 0.51" (13 x 13mm) copper pads
0.315 (8.00)
0.285 (7.24)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.255 (6.5)
0.245 (6.2)
0.335 (8.51)
0.320 (8.12)
0.045 (1.14)
0.035 (0.89)
0.080 (2.03)
0.050 (1.27)
0.023 (0.58)
0.018 (0.46)
0.185 (4.69)
0.150 (3.81)
0.130 (3.3)
0.120 (3.05)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Case Style DFM
Dimensions in inches and (millimeters)
7/28/98
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDF1DM/45 | 功能描述:RECTIFIER BRIDGE 1A 200V 4-DIP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標(biāo)準(zhǔn)包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:4-SDIP |
| EDF1DM-E3/45 | 功能描述:橋式整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| EDF1DS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:MINIATURE GLASS PASSIVATED FAST EFFICIENT SURFACE MOUNT BRIDGE RECTIFIER |
| EDF1DS/45 | 功能描述:RECTIFIER BRIDGE 1A 200V 4SMD RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標(biāo)準(zhǔn)包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:4-SDIP |
| EDF1DS-E3/45 | 功能描述:橋式整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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