參數(shù)資料
型號: EDD5104ADTA-6BL-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits DDR SDRAM
中文描述: 128M X 4 DDR DRAM, 0.7 ns, PDSO66
封裝: LEAD FREE, PLASTIC, TSOP2-66
文件頁數(shù): 18/49頁
文件大?。?/td> 568K
代理商: EDD5104ADTA-6BL-E
EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E
Preliminary Data Sheet E0501E10 (Ver. 1.0)
18
Command Truth Table for CKE
Current State
CKE
n – 1 n
/CS /RAS /CAS /WE Address
Operation
Notes
Self refresh
H
×
×
×
×
×
×
INVALID, CK (n-1) would exit self refresh
L
H
H
×
×
×
×
Self refresh recovery
L
H
L
H
H
×
×
Self refresh recovery
L
H
L
H
L
×
×
ILLEGAL
L
H
L
L
×
×
×
ILLEGAL
L
L
×
×
×
×
×
Maintain self refresh
Self refresh recovery
H
H
H
×
×
×
×
Idle after tRC
H
H
L
H
H
×
×
Idle after tRC
H
H
L
H
L
×
×
ILLEGAL
H
H
L
L
×
×
×
ILLEGAL
H
L
H
×
×
×
×
ILLEGAL
H
L
L
H
H
×
×
ILLEGAL
H
L
L
H
L
×
×
ILLEGAL
H
L
L
L
×
×
×
ILLEGAL
Power down
H
×
×
×
×
×
INVALID, CK (n – 1) would exit power down
L
H
H
×
×
×
×
EXIT power down
Idle
L
H
L
H
H
H
×
L
L
×
×
×
×
×
Maintain power down mode
All banks idle
H
H
H
×
×
×
Refer to operations in Function Truth Table
H
H
L
H
×
×
Refer to operations in Function Truth Table
H
H
L
L
H
×
Refer to operations in Function Truth Table
H
H
L
L
L
H
×
CBR (auto) refresh
H
H
L
L
L
L
OPCODE Refer to operations in Function Truth Table
H
L
H
×
×
×
Refer to operations in Function Truth Table
H
L
L
H
×
×
Refer to operations in Function Truth Table
H
L
L
L
H
×
Refer to operations in Function Truth Table
H
L
L
L
L
H
×
Self refresh
1
H
L
L
L
L
L
OPCODE Refer to operations in Function Truth Table
L
×
×
×
×
×
×
Power down
1
Row active
H
×
×
×
×
×
×
Refer to operations in Function Truth Table
Remark: H: VIH. L: VIL.
×
: VIH or VIL
Note: Self refresh can be entered only from the all banks idle state. Power down can be entered only from all
banks idle or row active state.
L
×
×
×
×
×
×
Power down
1
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