參數(shù)資料
型號: EDD5104ADTA-6B-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits DDR SDRAM
中文描述: 128M X 4 DDR DRAM, 0.7 ns, PDSO66
封裝: LEAD FREE, PLASTIC, TSOP2-66
文件頁數(shù): 9/49頁
文件大小: 568K
代理商: EDD5104ADTA-6B-E
EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E
Preliminary Data Sheet E0501E10 (Ver. 1.0)
9
Timing Parameter Measured in Clock Cycle
Number of clock cycle
tCK
6ns
7.5ns
Parameter
Symbol
min.
max.
min.
max.
Unit
Write to pre-charge command delay (same bank)
tWPD
4 + BL/2
3 + BL/2
tCK
Read to pre-charge command delay (same bank)
tRPD
BL/2
BL/2
tCK
Write to read command delay (to input all data)
tWRD
2 + BL/2
2 + BL/2
tCK
Burst stop command to write command delay
(CL = 2)
tBSTW
2
tCK
(CL = 2.5)
tBSTW
3
3
tCK
Burst stop command to DQ High-Z
(CL = 2)
tBSTZ
2
2
tCK
(CL = 2.5)
tBSTZ
2.5
2.5
2.5
2.5
tCK
Read command to write command delay
(to output all data)
(CL = 2)
tRWD
2 + BL/2
tCK
(CL = 2.5)
tRWD
3 + BL/2
3 + BL/2
tCK
Pre-charge command to High-Z
(CL = 2)
tHZP
2
2
tCK
(CL = 2.5)
tHZP
2.5
2.5
2.5
2.5
tCK
Write command to data in latency
tWCD
1
1
1
1
tCK
Write recovery time
tWR
3
2
tCK
DM to data in latency
tDMD
0
0
0
0
tCK
Mode register set command cycle time
tMRD
2
2
tCK
Self refresh exit to non-read command
tSNR
12
10
tCK
Self refresh exit to read command
tSRD
200
200
tCK
Power down entry
tPDEN
1
1
1
1
tCK
Power down exit to command input
tPDEX
1
1
tCK
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