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參數(shù)資料
| 型號： | ED472021 |
| 英文描述： | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|2KV V(RRM)|210A I(T) |
| 中文描述： | 晶閘管模塊|倍增|半CNTLD |負| 2kV的五（無線資源管理）| 210A我（翻譯） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 79K |
| 代理商： | ED472021 |
R-63
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
ED42_ _21, ED47_ _21
SCR/Diode Isolated
POW-R-BLOK Module
210 Amperes/600-2000 Volts
Electrical and Thermal Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
ED42_ _21/ED47_ _21
Units
Blocking State Maximums
Forward Leakage Current, Peak
IDRM
Tj = 130°C, VDRM = Rated
50
mA
Reverse Leakage Current, Peak
IRRM
Tj = 130°C, VRRM = Rated
50
mA
Conducting State Maximums
Peak On-State Voltage
VFM
IFM = 1500A
1.60
Volts
VTM
ITM = 625A
1.40
Volts
Switching Minimums
Critical Rate-of-Rise of Off-State Voltage
dv/dt
Tj = 130°C, VD = 2/3 VDRM
500
Volts/ s
Turn-Off Time (Typical)
tq
Tj = 130°C, IT = 250A
150
s
Reapplied dv/dt = 20V/ s
Linear to 0.8 VDRM
Turn-On Time (Typical)
ton
ITM = 100A, VD = 100V
7
s
Diode Reverse Recovery Time (Typical)
trr
IFM = 1500A, TP = 190 s10
s
di/dt = -25A/ s
Thermal Maximums
Thermal Resistance, Junction-to-Case
R (J-C)
Per Module
0.09
°C/Watt
Thermal Resistance, Case-to-Sink (Lubricated)
R (C-S)
Per Module
0.03
°C/Watt
Gate Parameters Maximums
Gate Current-to-Trigger
IGT
VD = 12V
150
mA
Gate Voltage-to-Trigger
VGT
VD = 12V
3
Volts
Non-Triggering Gate Voltage
VGDM
Tj = 130°C, VD = 1/2 VDRM
0.15
Volts
WARNING:
Internal insulation used is Beryllium Oxide.
User should avoid grinding, crushing, or abrading these portions.
Care must be exercised in properly disposing of unwanted devices.
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