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參數(shù)資料
| 型號(hào)： | ED303T |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 300 V, SILICON, RECTIFIER DIODE, TO-251AB |
| 封裝： | HERMETIC SEALED, PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | ED303T |
PAGE . 1
DATE : APR.18.2003
FEATURES
Superfast recovery times-epitaxial construction.
Low forward voltage, high current capability.
Exceeds environmental standards of MIL-S-19500/228.
Hermetically sealed.
Low leakage.
High surge capability.
Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
MECHANICAL DATA
Case: Molded plastic, TO-251AB
Terminals: Axial leads, solderable to MIL-STD-202,Method 208
Polarity: As marking
Weight:
0.015 ounces, 0.4grams.
ED302T~ED306T
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE- 200 to 600 Volts CURRENT - 3.0 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current .375"(9.5mm)
lead length at T
A
=75°C
Peak Forward Surge Current, IFM (surge):8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum DC Reverse Current at Rated DC Blocking Voltage T
A
=125°C
Maximum Reverse Recovery Time(Note 1)
Typical Junction capacitance (Note 2)
Typical Junction Resistance(Note 3) R
θ
JA
Operating and Storage Temperature Range T
J
3.0
75
0.95
5.0
35.0
45
25
-55 to +150
V
V
V
A
A
V
μA
ns
pF
UNIT
°C/ W
NOTES:
1. Thermal Resistance Junction to Ambient .
300
μA
°C
DATA SHEET
TO-251AB
Unit: inch ( mm )
.09
(2.3)
.09
(2.3)
.264(6.7)
.248(6.3)
.216(5.5)
.200(5.1)
.
.
.
.
.032(0.8)
.012(0.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
.071(1.8)
.051(1.3)
3
2
1
4
.02(0.5)
.
.
4
2
3
ED303T
300
210
300
ED304T
400
280
400
ED306T
600
420
600
1.25
1.70
ED302T
200
140
200
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