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參數(shù)資料
| 型號： | ED1802M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP general purpose transistor |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | ED1802M |
1999 Apr 27
3
Philips Semiconductors
Product specification
PNP general purpose transistor
ED1802
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
5
500
476
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
20 V
I
E
= 0; V
CB
=
20 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
500 mA; V
CE
=
1 V
I
C
=
100 mA; V
CE
=
1 V
I
C
=
100 mA; V
CE
=
1 V
40
106
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
h
FE
DC current gain
ED1802K
ED1802L
ED1802M
ED1802N
ED1802P
collector-emitter saturation voltage
collector capacitance
transition frequency
106
132
170
213
333
150
189
233
300
476
700
15
V
CEsat
C
c
f
T
I
C
=
500 mA; I
B
=
50 mA; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 80
mV
pF
MHz
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