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參數(shù)資料
| 型號(hào)： | ED1702P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | CAPACITOR 2200UF 25V CAPACITOR 2200UF 25V; CAPACITANCE:2200UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:ZLH; TEMP, OP. MAX:105(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | ED1702P |
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1702
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 500 mA; V
CE
= 1 V
I
C
= 100 mA; V
CE
= 1 V
I
C
= 100 mA; V
CE
= 1 V
40
132
100
5
500
476
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
h
FE
DC current gain
ED1702L
ED1702M
ED1702N
ED1702O
ED1702P
collector-emitter saturation voltage
collector capacitance
transition frequency
132
170
213
263
333
80
189
233
300
370
476
700
6
V
CEsat
C
c
f
T
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
mV
pF
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ED1802 | PNP general purpose transistor |
| ED1802K | Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to +105 C; Capacitance:680uF RoHS Compliant: Yes |
| ED1802L | PNP general purpose transistor |
| ED1802M | PNP general purpose transistor |
| ED1802N | PNP general purpose transistor |
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