參數(shù)資料
型號(hào): EBS26UC6APS-7A
廠商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: RELAY OPTO 120MA W/SURGE 8-DIP
中文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
封裝: SODIMM-144
文件頁(yè)數(shù): 1/14頁(yè)
文件大?。?/td> 145K
代理商: EBS26UC6APS-7A
Document No. E0225E20 (Ver. 2.0)
Date Published December 2001 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001
C
DATA SHEET
256MB SDRAM S.O.DIMM
EBS26UC6APS (32M words
×
64 bits, 2 bank)
Description
The EBS26UC6APS is 32M words
×
64 bits, 2 banks
Synchronous Dynamic RAM Small Outline Dual In-line
Memory Module (S.O.DIMM), mounted 8 pieces of
256M bits SDRAM (EDS2516APTA) sealed in TSOP
package. This module provides high density and large
quantities of memory in a small space without utilizing
the surface mounting technology. Decoupling
capacitors are mounted on power supply line for noise
reduction.
Features
Fully compatible with 8 bytes S.O.DIMM: JEDEC
standard outline
144-pin socket type small outline dual in line memory
module (S.O.DIMM)
PCB height: 31.75mm (1.25inch )
Lead pitch: 0.80mm
3.3V power supply
Clock frequency: 100MHz/133MHz (max.)
LVTTL interface
Data bus width:
×
64 non-ECC
Single pulsed /RAS
4 Banks can operates simultaneously and
independently
Burst read/write operation and burst read/single write
operation capability
Programmable burst length (BL): 1, 2, 4, 8, Full page
2 variations of burst sequence
Sequential
Interleave
Programmable /CAS latency (CL): 2, 3
Byte control by DQMB
Refresh cycles: 8192 refresh cycles/64ms
2 variations of refresh
Auto refresh
Self refresh
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