參數(shù)資料
型號(hào)： EBE51RD8AEFA
廠商： Elpida Memory, Inc.
英文描述： 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
中文描述： 512MB的注冊(cè)DDR2 SDRAM DIMM內(nèi)存（6400字× 72位，1個(gè)等級(jí)）
文件頁(yè)數(shù)： 11/22頁(yè)
文件大?。?/td> 190K
代理商： EBE51RD8AEFA
EBE51RD8AEFA
Data Sheet E0645E30 (Ver. 3.0)
11
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
-5C
-4A
1480
1310
mA
Operating current
(ACT-READ-PRE)
IDD1
-5C
-4A
1680
1470
mA
Precharge power-down
standby current
IDD2P
-5C
-4A
580
500
mA
Precharge quiet standby
current
IDD2Q
-5C
-4A
720
610
mA
Idle standby current
IDD2N
-5C
-4A
760
660
mA
IDD3P-F -4A
850
750
mA
Fast PDN Exit
MRS(12) = 0
Active power-down
standby current
IDD3P-S -4A
720
610
mA
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs are
STABLE;
Data bus inputs are
FLOATING
Slow PDN Exit
MRS(12) = 1
Active standby current
IDD3N
-5C
-4A
1100
990
mA
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(Burst read operating)
IDD4R
-5C
-4A
2270
1830
mA
Operating current
(Burst write operating)
IDD4W
-5C
-4A
2270
1830
mA
相關(guān)PDF資料
PDF描述
EBE51RD8AEFA-4A-E Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
EBE51RD8AEFA-5C-E 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8ABFA 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8ABFA-4A-E 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8ABFA-5C-E 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE51RD8AEFA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8AEFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
EBE51RD8AEFA-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR2 SDRAM DIMM
EBE51RD8AEFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR2 SDRAM DIMM
EBE51RD8AGFA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
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