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參數(shù)資料
| 型號： | EBE51ED8AGFA-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) |
| 中文描述： | 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 11/22頁 |
| 文件大?。?/td> | 186K |
| 代理商： | EBE51ED8AGFA-5C-E |
EBE51ED8AEFA
Data Sheet E0585E20 (Ver. 2.0)
11
DC Characteristics 1 (TC = 0 to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
990
855
Operating current
(ACT-PRE)
IDD0
-5C
-4A
mA
1125
990
Operating current
(ACT-READ-PRE)
IDD1
-5C
-4A
mA
90
72
Precharge power-down
standby current
IDD2P
-5C
-4A
mA
225
180
Precharge quiet standby
current
IDD2Q
-5C
-4A
mA
270
225
Idle standby current
IDD2N
-5C
-4A
mA
360
315
IDD3P-F
-5C
-4A
mA
Fast PDN Exit
MRS(12) = 0
225
180
Active power-down
standby current
IDD3P-S
-5C
-4A
mA
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and address bus
inputs are STABLE;
Data bus inputs are FLOATING
Slow PDN Exit
MRS(12) = 1
585
540
Active standby current
IDD3N
-5C
-4A
mA
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
1710
1350
Operating current
(Burst read operating)
IDD4R
-5C
-4A
mA
1710
1350
Operating current
(Burst write operating)
IDD4W
-5C
-4A
mA
2250
2070
Auto-refresh current
IDD5
-5C
-4A
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBE51ED8AGFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) |
| EBE51ED8AGWA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM |
| EBE51ED8AGWA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM |
| EBE51ED8AGWA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM |
| EBE51ED8AJWA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR2 SDRAM DIMM |
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