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參數資料
| 型號： | EBE21RD4AEFA-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| 中文描述： | 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數： | 11/22頁 |
| 文件大小： | 173K |
| 代理商： | EBE21RD4AEFA-5C-E |
EBE21RD4ABHA
Data Sheet E0451E20 (Ver. 2.0)
11
DC Characteristics 1 (TC = 0 to +85
°
C, VDD = 1.8V ± 0.1V, VSS = 0V)
Parameter
Symbol Grade
max
Unit
Test condition
-5C
3770
Operating current
(ACT-PRE)
IDD0
-4A
3360
mA
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and
address bus inputs are
STABLE;
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
-5C
4220
Operating current
(ACT-READ-PRE)
IDD1
-4A
3740
mA
-5C
980
Precharge power-down
standby current
IDD2P
-4A
860
mA
-5C
1520
Precharge quiet standby
current
IDD2Q
-4A
1290
mA
-5C
1700
Idle standby current
IDD2N
-4A
1470
mA
-5C
2060
IDD3P-F
-4A
1830
mA
Fast PDN Exit
MRS(12) = 0
-5C
1520
Active power-down
standby current
IDD3P-S
-4A
1290
mA
Slow PDN Exit
MRS(12) = 1
-5C
3050
Active standby current
IDD3N
-4A
2820
mA
-5C
5120
Operating current
(Burst read operating)
IDD4R
-4A
4370
mA
-5C
5120
Operating current
(Burst write operating)
IDD4W
-4A
4370
mA
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| EBE21RD4AGFA-4A-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-5C-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
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| EBE21RD4ABHA | GT 13C 13#16 PIN PLUG |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EBE21RD4AEFA-6 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE21RD4AEFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE21RD4AGFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
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