參數(shù)資料
型號(hào)： EBE10RD4AEFA
廠商： Elpida Memory, Inc.
元件分類： 圓形連接器
英文描述： Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
中文描述： 1GB的注冊(cè)DDR2 SDRAM DIMM內(nèi)存（128M的字× 72位，1個(gè)等級(jí)）
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 190K
代理商： EBE10RD4AEFA
Document No. E0644E30 (Ver. 3.0)
Date Published April 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005
DATA SHEET
1GB Registered DDR2 SDRAM DIMM
EBE10RD4AEFA
(128M words
×
72 bits, 1 Rank)
Description
The EBE10RD4AEFA is a 128M words
×
72 bits, 1
rank DDR2 SDRAM Module, mounting 18 pieces of
DDR2 SDRAM sealed in FBGA (
μ
BGA
) package.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 4bits prefetch-pipelined
architecture. Data strobe (DQS and /DQS) both for
read and write are available for high speed and reliable
data bus design. By setting extended mode register,
the on-chip Delay Locked Loop (DLL) can be set
enable or disable. This module provides high density
mounting without utilizing surface mount technology.
Decoupling capacitors are mounted beside each FBGA
(
μ
BGA) on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
Data rate: 533Mbps/400Mbps (max.)
SSTL_18 compatible I/O
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs; center
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
referenced to both edges of DQS
Four internal banks for concurrent operation
(components)
Burst length: 4, 8
/CAS latency (CL): 3, 4, 5
Auto precharge option for each burst access
Auto refresh and self refresh modes
Average refresh period
7.8
μ
s at 0
°
C
≤
TC
≤
+
85
°
C
3.9
μ
s at
+
85
°
C
<
TC
≤
+
95
°
C
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
/DQS can be disabled for single-ended Data Strobe
operation
1 piece of PLL clock driver, 2 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
相關(guān)PDF資料
PDF描述
EBE10RD4AEFA-5C-E 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4ABFA 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4ABFA-4A-E 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4ABFA-5C-E 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4AGFA-5C-E 1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBE10RD4AEFA-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4AEFA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
EBE10RD4AEFA-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM
EBE10RD4AEFA-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM
EBE10RD4AGFA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Registered DDR2 SDRAM DIMM (128M words x 72 bits, 1 Rank)
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