參數(shù)資料
型號: EBD26UC6AKSA-E
廠商: Elpida Memory, Inc.
英文描述: Single Pole Normally Open: 1-Form-A
中文描述: 256MB的DDR SDRAM的SO - DIMM插槽(32M的字× 64位,2個(gè)等級)
文件頁數(shù): 8/19頁
文件大?。?/td> 204K
代理商: EBD26UC6AKSA-E
EBD26UC6AKSA
Preliminary Data Sheet E0307E20 (Ver. 2.0)
8
Block Diagram
DM0
SDRAMs
(D0 to D7)
SDRAMs
(D0 to D7)
BA0 to BA1
SDRAMs (D0 to D7)
CKE0
CKE1
SDRAMs (D0 to D3)
SDRAMs (D4 to D7)
VDDSPD
SPD
VREF
SDRAMs (D0 to D7)
VDD
SDRAMs (D0 to D7),
and
VSS
VDDID
VDD
VDDQ
Open
SDRAMs (D0 to D7), SPD
Serial PD
SDA
A0
A1
A2
WP
SCL
SA0
SA1
SA2
U0
SDA
SCL
Notes :
1. DQ wiring may differ from that described
in this drawing; however DQ/DM/DQS
relationships are maintained as shown.
VDDID strap connections:
(for memory device VDD, VDDQ)
Strap out (open): VDD = VDDQ
Strap in (closed): VDD
VDDQ
2. The SDA pull-up registor is reguired due to
the open-drain/open-collector output.
3. The SCL pull-up registor is recommended,
because of the normal SCL lime inactive
"high" state.
DQS0
DQ0 to DQ7
8
D0
/RAS
/CAS
/WE
A0 to AN
SDRAMs
(D0 to D7)
SDRAMs (D0 to D7)
4 loads
CK0
/CK0
4 loads
CK1
/CK1
10 pF
CK2
/CK2
/CS0
/CS1
/CS
D2
/CS
LDQS
LDM
I/O0 to I/O7
* D0 to D7 : 256M bits DDR SDRAM
U0 : 2k bits EEPROM
Rs : 22
RS
RS
RS
DM1
DQS1
DQ8 to DQ15
8
UDQS
UDM
I/O8 to I/O15
RS
RS
RS
DM4
DQS4
DQ32 to DQ39
8
RS
RS
RS
DM5
DQS5
DQ40 to DQ47
8
RS
RS
RS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
DM2
DQS2
DQ16 to DQ23
8
D1
/CS
D3
/CS
LDQS
LDM
I/O0 to I/O7
RS
RS
RS
DM3
DQS3
DQ24 to DQ31
8
UDQS
UDM
I/O8 to I/O15
D4
/CS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
D5
/CS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
RS
RS
RS
DM6
DQS6
DQ48 to DQ55
8
RS
RS
RS
DM7
DQS7
DQ56 to DQ63
8
RS
RS
RS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
D6
/CS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
D7
/CS
LDQS
LDM
I/O0 to I/O7
UDQS
UDM
I/O8 to I/O15
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