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參數(shù)資料
| 型號(hào)： | E50A2CBS |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| 中文描述： | 堆棧擴(kuò)散硅二極管（發(fā)電機(jī)二極管汽車(chē)） |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | E50A2CBS |
2002. 4. 9
1/1
SEMICONDUCTOR
TECHNICAL DATA
E50A2CBS, E50A2CBR
STACK SILICON DIFFUSED DIODE
Revision No : 2
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ
11.5 MAX
Φ
12.75+0.09-0.00
Φ
1.3+
4.2 0.2
8.0+
TYP 0.5
Φ
10.0+
0.4 0.1
x
45
8.5 MAX
B-PF
0.2+0.1
28.35+
H
F
EI
D
G
B
J
K
A
+
+
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=50A.
Repetive Peak Reverse Voltage : V
RRM
=200V
POLARITY
E50A2CBS E50A2CBR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
50
A
Peak 1 Cycle Surge Current
I
FSM
380 (60Hz)
A
Repetitive Peak Revese Voltage
V
RRM
200
V
Junction Temperature
T
j
-40
215
Storage Temperature Range
T
stg
-40
215
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
FM
=100A
-
-
1.05
V
Reverse Voltage
V
R
I
R
=5mA
200
-
-
V
Reverse Current
I
R
V
R
=200V
-
-
50
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100ms
-
-
80
mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150
, V
R
=200V
-
-
2.5
mA
Reverse Recovery Time
t
rr
I
F
=100mA, I
R
=100mA
-
-
15
s
Temperature Resistance
R
th
DC total Junction to case
-
-
0.6
/W
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