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參數(shù)資料
| 型號(hào)： | E30A27VR |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| 中文描述： | 堆棧擴(kuò)散硅二極管（發(fā)電機(jī)二極管汽車） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 389K |
| 代理商： | E30A27VR |
2002. 10. 9
1/2
SEMICONDUCTOR
TECHNICAL DATA
E30A27VS, E30A27VR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
POLARITY
E30A27VS E30A27VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
A1
A2
A3
B1
D3
D2
B2
C1
C2
D1
2.0 0.3
+
1.9+
+
+
8.5+
+
E
10.0 0.3
13.5 0.3
24.0+
10.0 0.3
5.0+
2.5+
5.0 0.3
+
+
4.5 0.3
9.0+
1.0 0.3
4.4 0.5
0.6+
DIM
MILLIMETERS
F
G
H
T
A3
A2
A1
D3
E
F
G
D
D
T
H
C
C
B
B
MR
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Zener Voltage
V
Z
I
Z
=10mA
24
-
30
V
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.2
V
Repetitive Peak Reverse Current
I
RRM
V
RRM
=24V
-
-
50
A
Zener Voltage
Temperature Coefficient
r
Z
I
Z
=10mA
23
-
36
mV/
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
-
-
15
S
Temperature Resistance
R
th
DC total junction to case
-
-
1.0
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
DC Reverse Voltage
V
DC
24
V
Average Forward Current
I
F(AV)
30
A
Peak 1 Cycle Surge Current
I
FSM
250 (50Hz)
A
Non-Repetitive Reverse 1 Cycle
Surge Current
I
RSM
50
A
Junction Temperature
T
j
-40
150
Storage Temperature Range
T
stg
-40
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E30A27VS | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| E30A2CDR | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| E30A2CDS | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| E30A2CPR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Automotive＞Alternator Diode＞E30A2CPR |
| E30A2CPS | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
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