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參數(shù)資料
| 型號(hào)： | E28F016SV-065 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 5V PROM, 65 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP1-56 |
| 文件頁(yè)數(shù)： | 23/37頁(yè) |
| 文件大小： | 611K |
| 代理商： | E28F016SV-065 |
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E
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY
23
PRODUCT PREVIEW
SR.7 =
0
1
Start
Write 60H,
Block/Device Address
Write 01H/F1H,
Block/Device Address
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
V
PP
Range Error
1
0
Command Sequence
Error
SR.3 =
SR.4 =
SR.4,5 =
Set Lock-Bit Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple lock-bits are set before
full status is checked.
If error is detected, clear the Status Register before attempting retry
or other error recovery.
Check SR.4
1 = Set Lock-Bit Reset Error
Standby
Bus
Operation
Command
Comments
Write
Write
Set
Block/Master
Lock-Bit Setup
Read
Data = 60H
Addr = Block Address (Block),
Device Address (Master)
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent lock-bit set operations.
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in
read array mode.
Status Register Data
Standby
Set
Block or Master
Lock-Bit Confirm
Data = 01H (Block),
F1H (Master)
Addr = Block Address (Block),
Device Address (Master)
Set Lock-Bit Successful
Standby
0
1
Device Protect Error
SR.1 =
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect Detect
RP# = V
,
(Set Master Lock-Bit Operation)
RP# = V
, Master Lock-Bit Is Set
(Set Block Lock-Bit Operation)
Figure 10. Set Block and Master Lock-Bit Flowchart
相關(guān)PDF資料 |
PDF描述 |
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| E28F016SV-070 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016SV-075 | WSR2 0.04 Ohms 1% Tolerance |
| E28F016SV-080 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016SV-120 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F016SV-070 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016SV-075 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016SV-080 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016SV-120 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| E28F016XD-85 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
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