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參數(shù)資料
| 型號： | E28F016SA-120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封裝： | 20 X 14 MM, 1.20 MM HEIGHT, TSOP1-56 |
| 文件頁數(shù)： | 30/37頁 |
| 文件大?。?/td> | 611K |
| 代理商： | E28F016SA-120 |
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BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY
E
30
PRODUCT PREVIEW
6.2.4
COMMERCIAL TEMPERATURE AC CHARACTERISTICS - READ-ONLY OPERATIONS
(1)
Commercial Temperature Read-Only Operations for
4-, 8-, and 16-Mbit Smart 5 FlashFile Memories at T
A
= 0°C to +70°C
5V ± 5% V
CC
–85/–95
(5)
Versions
(4)
5V ± 10% V
CC
–90/–100
(6)
–120
(6)
#
Sym
Parameter
Notes Min
Max
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
4, 8 Mbit
85
90
120
ns
16 Mbit
95
100
120
ns
R2
t
AVQV
Address to Output
4, 8 Mbit
85
90
120
ns
Delay
16 Mbit
95
100
120
ns
R3
t
ELQV
CE# to Output Delay
4, 8 Mbit
2
85
90
120
ns
16 Mbit
2
95
100
120
ns
R4
t
GLQV
OE# to Output Delay
2
40
45
50
ns
R5
t
PHQV
RP# High to Output Delay
400
400
400
ns
R6
t
ELQX
CE# to Output in Low Z
3
0
0
0
ns
R7
t
GLQX
OE# to Output in Low Z
3
0
0
0
ns
R8
t
EHQZ
CE# High to Output in High Z
3
55
55
55
ns
R9
t
GHQZ
OE# High to Output in High Z
3
10
10
15
ns
R10
t
OH
Output Hold from Address, CE#
or OE# Change, Whichever
Occurs First
3
0
0
0
ns
NOTES:
1.
2.
3.
4.
5.
See AC Input/Output Reference Waveform for maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
-t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, not 100% tested.
See Ordering Information for device speeds (valid operational combinations).
See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Speed
Configuration) for testing characteristics.
See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
for testing characteristics.
6.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F016SA-150 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| E28F016SC-120 | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| E28F016XS15 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| E28F008S5-120 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| E28F008S3-120 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F016SA-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| E28F016SA70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| E28F016SA-70 | 制造商:Intel 功能描述: 制造商:Intel 功能描述:28F016SA-70 |
| E28F016SC-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
| E28F016SC-95 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
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