參數(shù)資料
型號(hào): E28F010-120
廠(chǎng)商: INTEL CORP
元件分類(lèi): PROM
英文描述: 1024K (128K x 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁(yè)數(shù): 17/30頁(yè)
文件大?。?/td> 405K
代理商: E28F010-120
28F010
DC CHARACTERISTICSDTTL/NMOS COMPATIBLEDExtended Temperature
Products
Symbol
Parameter
Notes
Limits
Unit
Test Conditions
Min Typical
(4)
Max
I
LI
Input Leakage Current
1
g
1.0
m
A V
CC
e
V
CC
Max
V
IN
e
V
CC
or V
SS
m
A V
CC
e
V
CC
Max
V
OUT
e
V
CC
or V
SS
mA V
CC
e
V
CC
Max
CE
Y
e
V
IH
mA V
e
V
CC
Max, CE
Y
e
V
IL
f
e
6 MHz, I
OUT
e
0 mA
mA Programming in Progress
I
LO
Output Leakage Current
1
g
10
I
CCS
V
CC
Standby Current
1
0.3
1.0
I
CC1
V
CC
Active Read Current
1
10
30
I
CC2
I
CC3
I
CC4
V
CC
Programming Current
V
CC
Erase Current
V
CC
Program Verify Current
1, 2
1.0
30
1, 2
5.0
30
mA Erasure in Progress
1, 2
5.0
30
mA V
PP
e
V
PPH
Program Verify in Progress
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
30
mA V
PP
e
V
PPH
Erase Verify in Progress
I
PPS
I
PP1
V
PP
Leakage Current
V
PP
Read Current
or Standby Current
1
g
10
200
m
A V
PP
s
V
CC
m
A V
PP
l
V
CC
V
PP
s
V
CC
mA V
PP
e
V
PPH
Programming in Progress
1
90
g
10.0
30
I
PP2
V
PP
Programming Current
1, 2
8.0
I
PP3
V
PP
Erase Current
1, 2
6.0
30
mA V
PP
e
V
PPH
Erasure in Progress
I
PP4
V
PP
Program Verify Current
1, 2
2.0
5.0
mA V
PP
e
V
PPH
Program Verify in Progress
I
PP5
V
PP
Erase Verify Current
1, 2
2.0
5.0
mA V
PP
e
V
PPH
Erase Verify in Progress
V
IL
V
IH
V
OL
Input Low Voltage
b
0.5
0.8
V
Input High Voltage
2.0
V
CC
a
0.5
0.45
V
Output Low Voltage
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
OH1
Output High Voltage
2.4
V
V
ID
I
ID
V
PPL
A
9
Intelligent Identifer Voltage
A
9
Intelligent Identifier Current
V
PP
during Read-Only
Operations
11.50
13.00
V
1, 2
90
500
m
A A
9
e
V
ID
V
NOTE:
Erase/Program are
Inhibited when V
PP
e
V
PPL
V
0.00
6.5
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
LKO
V
CC
Erase/Write Lock Voltage
2.5
V
17
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