參數(shù)資料
型號(hào)： E28F008S3-150
廠商： INTEL CORP
元件分類： PROM
英文描述： BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述： 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁(yè)數(shù)： 26/37頁(yè)
文件大?。?/td> 611K
代理商： E28F008S3-150
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY
E
26
PRODUCT PREVIEW
6.0
ELECTRICAL SPECIFICATIONS
6.1
Absolute Maximum Ratings*
Temperature under Bias.................
–10°C to +80°C
Storage Temperature....................–65°C to +125°C
Voltage On Any Pin
(except V
PP,
and RP#)............–2.0V to +7.0V
(2)
V
PP
Voltage............................. –2.0V to +14.0V
(1,2)
RP# Voltage.......................... –2.0V to +14.0V
(1,2,4)
Output Short Circuit Current ....................100 mA
(3)
NOTICE: This datasheet contains information on products
in the design phase of development. Do not finalize a
design with this information. Revised information will be
published when the product is available. Verify with your
local Intel Sales office that you have the latest datasheet
before finalizing a design.
*WARNING: Stressing the device beyond the
“Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability
.
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is
–0.5V on input/output pins and –0.2V on V
CC
, RP#,
and V
PP
pins. During transitions, this level may undershoot to –2.0V for periods <20 ns. Maximum DC voltage on
input/output pins and V
CC
is V
CC
+0.5V which, during transitions, may overshoot to V
CC
+2.0V for periods <20 ns.
2. Maximum DC voltage on V
PP
and RP# may overshoot to +14.0V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. RP# voltage is normally at V
IL
or V
IH
. Connection to supply of V
HH
is allowed for a maximum cumulative period of 80 hours.
6.2
Commercial Temperature Operating Conditions
Commercial Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
T
A
Operating Temperature
0
+70
°C
Ambient Temperature
V
CC1
V
CC
Supply Voltage (5V ± 5%)
4.75
5.25
V
V
CC2
V
CC
Supply Voltage (5V ± 10%)
4.50
5.50
V
6.2.1
CAPACITANCE
(1)
T
A
= +25°C, f = 1 MHz
Typ
Symbol
Parameter
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
= 0.0V
C
OUT
Output Capacitance
8
12
pF
V
OUT
= 0.0V
NOTE:
1.
Sampled, not 100% tested.
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E28F008SA-120 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F008S5120 功能描述:IC FLASH 8MBIT 120NS 40TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF)
E28F008S5-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F008S5-85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F008SA-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SA85 制造商:Intel 功能描述:
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