參數(shù)資料
型號(hào)： E28F002BX-T120
廠商： INTEL CORP
元件分類： PROM
英文描述： 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 256K X 8 FLASH 12V PROM, 120 ns, PDSO40
封裝： 20 X 10 MM, TSOP-40
文件頁數(shù)： 35/48頁
文件大?。?/td> 453K
代理商： E28F002BX-T120
28F200BX-TB 28F002BX-TB
AC CHARACTERISTICS FOR WE -CONTROLLED WRITE OPERATIONS(1)
(Continued)
Versions
VCC g5%
VCC g 10%
Unit
28F200BX-60(9)
28F200BX-60(10)
28F200BX-80(10)
28F200BX-120(10)
28F002BX-60(9)
28F002BX-60(10)
28F002BX-80(10)
28F002BX-120(10)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tQVPH tPHH RP
VHH Hold
6 8
0
ns
from Valid SRD
tPHBR
Boot-Block
7 8
100
ns
Relock Delay
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
characteristics during Read Mode
2 The on-chip WSM completely automates programerase operations programerase algorithms are now controlled inter-
nally which includes verify and margining operations
3 Refer to command definition table for valid AIN
4 Refer to command definition table for valid DIN
5 ProgramErase durations are measured to valid SRD data (successful operation SR7e1)
6 For Boot Block ProgramErase RP
should be held at VHH until operation completes successfully
7 Time tPHBR is required for successful relocking of the Boot Block
8 Sampled but not 100% tested
9 See High Speed Test Configuration
10 See Standard Test Configuration
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE VPP e 120V g5%
Parameter
Notes
28F200BX-60
28F200BX-80
28F200BX-120
Unit
28F002BX-60
28F002BX-80
28F002BX-120
Min
Typ(1)
Max
Min
Typ(1)
Max
Min
Typ(1)
Max
BootParameter
2
10
7
10
7
10
7
s
Block Erase Time
Main Block
2
24
14
24
14
24
14
s
Erase Time
Main Block Byte
2
12
42
12
42
12
42
s
Program Time
Main Block Word
2
06
21
06
21
06
21
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE VPP e 120V g10%
Parameter
Notes
28F200BX-60
28F200BX-80
28F200BX-120
Unit
28F002BX-60
28F002BX-80
28F002BX-120
Min
Typ(1)
Max
Min
Typ(1)
Max
Min
Typ(1)
Max
BootParameter
2
58
40
58
40
58
40
s
Block Erase Time
Main Block
2
14
60
14
60
14
60
s
Erase Time
Main Block Byte
2
60
20
60
20
60
20
s
Program Time
Main Block Word
2
30
10
30
10
30
10
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
40
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F002BX-T60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F002BX-T70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
E28F002BX-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F004 制造商:INTELC 功能描述:
E28F004B5B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
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