
POWER TRANSISTOR E13003
ELECTRICAL CHARACTERISTICS
Tc=25
o
C unless otherwise specified
FEATURES
NPN SILICON TRANSISTOR
Tc=25
o
C unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=1mA , I
E
=0
I
C
=10mA , I
B
=0
I
E
=1mA , I
C
=0
V
CB
=700V , I
E
=0
V
CE
=400V , I
B
=0
V
EB
=9V , I
C
=0
V
CE
=2V , I
C
=0.5mA
V
CE
=10V , I
C
=0.5mA
I
C
=1A , I
B
=250mA
I
C
=1A , I
B
=250mA
I
E
=2A
V
CE
=10V , I
C
=100mA
f=1MHz
I
C
=1A , I
B1
=-I
B2
=0.2mA ,
V
CC
=100V
V
700
400
1
1
40
1
1.2
3
0.5
2.5
500
9
8
5
5
V
V
mA
A
mA
V
V
V
MHz
S
S
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CEsat
V
BEsat
V
BE
f
T
t
f
t
s
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
SWITCHING REGULATOR APPLICATION
High speed switching
Suitable for switching regulator
and motor control
Case : TO-126 molded plastic body
Parameter
Symbol
Value
UNIT
Collector dissipation
P
C
W
20
1.5
3
A
A
I
C
I
CP
Collector current (DC)
Collector current (Pulse)
-55
o
C to +150
o
C
o
C
T
J
, T
STG
Operating and storage junction temperature range
TO-126
±B±
U
±A±
M
K
F
C
Q
H
V
G
S
D
J
R
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
MIN
0.425
0.295
0.095
0.020
0.115
0.094 BSC
0.050
0.015
0.575
5 TYP
0.148
0.045
0.025
0.145
0.040
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
MILLIMETERS
INCHES
2.39 BSC
1.27
0.39
14.61
5 TYP
3.76
1.15
0.64
3.69
1.02
0.095
0.025
0.655
2.41
0.63
16.63
0.158
0.065
0.035
0.155
±±±
4.01
1.65
0.88
3.93
±±±