ELECTRICAL CHARACTERISTICS (@ V S =
參數(shù)資料
型號: AMP01GSZ
廠商: Analog Devices Inc
文件頁數(shù): 20/22頁
文件大小: 0K
描述: IC AMP INST PREC LN 120MA 20SOIC
標(biāo)準(zhǔn)包裝: 37
放大器類型: 儀表
電路數(shù): 1
轉(zhuǎn)換速率: 4.5 V/µs
-3db帶寬: 570kHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 40µV
電流 - 電源: 3mA
電流 - 輸出 / 通道: 120mA
電壓 - 電源,單路/雙路(±): ±4.5 V ~ 18 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 20-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 20-SOIC W
包裝: 管件
AMP01
–7–
REV. D
ELECTRICAL CHARACTERISTICS (@ V
S =
15 V, RS = 10 k , RL = 2 k , TA = +25 C, unless otherwise noted)
AMP01NBC
AMP01GBC
Parameter
Symbol
Conditions
Typical
Units
Input Offset Voltage Drift
TCVIOS
0.15
0.30
V/°C
Output Offset Voltage Drift
TCVOOS
RG =
20
50
V/°C
Input Bias Current Drift
TCIB
40
50
pA/
°C
Input Offset Current Drift
TCIOS
3
5
pA/
°C
Nonlinearity
G = 1000
0.0007
%
Voltage Noise Density
en
G = 1000
fO = 1 kHz
5
nV/
√Hz
Current Noise Density
in
G = 1000
fO = 1 kHz
0.15
pA/
√Hz
Voltage Noise
en p-p
G = 1000
0.1 Hz to 10 Hz
0.12
V p-p
Current Noise
in p-p
G = 1000
2
pA p-p
0.1 Hz to 10 Hz
Small-Signal Bandwidth (–3 dB) BW
G = 1000
26
kHz
Slew Rate
SR
G = 10
4.5
V/
s
Settling Time
tS
To 0.01%, 20 V Step
G = 1000
50
s
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
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