分離式半導(dǎo)體產(chǎn)品 SI1551DL-T1-GE3品牌、價格、PDF參數(shù)

SI1551DL-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 0 3,000:$0.18600
6,000:$0.17400
15,000:$0.16200
30,000:$0.15300
75,000:$0.15000
150,000:$0.14400
SI3932DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6-TSOP 1,901 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI3932DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6-TSOP 1,901 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH D-S 20V 8-SOIC 2,500 2,500:$0.67200
5,000:$0.63840
12,500:$0.61200
25,000:$0.59520
62,500:$0.57600
SI7913DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 14,229 1:$1.86000
25:$1.43120
100:$1.29850
250:$1.16600
500:$1.00700
1,000:$0.84800
SI7913DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 14,229 1:$1.86000
25:$1.43120
100:$1.29850
250:$1.16600
500:$1.00700
1,000:$0.84800
SI1551DL-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: N 和 P 溝道
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 290mA，410mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 1.9 歐姆 @ 290mA，4.5V
Id 時的 Vgs(th)（最大）: 1.5V @ 250µA
閘電荷(Qg) @ Vgs: 1.5nC @ 4.5V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 270mW
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP，SC-88，SOT-363
供應(yīng)商設(shè)備封裝: SC-70-6
包裝: 帶卷 (TR)