| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI4567DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.27695 |
| SI3911DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL 20V 6TSOP | 0 | 3,000:$0.27550 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 3,000:$0.25375 6,000:$0.23625 15,000:$0.22750 30,000:$0.21875 |
| SI4214DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.25375 |
| SI3529DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI3529DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI1970DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V SC70-6 | 0 | 3,000:$0.21750 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 40V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5A，4.4A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 60 毫歐 @ 4.1A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 12nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 355pF @ 20V |
| 功率 - 最大: | 2.75W，2.95W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |