| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4214DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.25375 |
| SI3529DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI3529DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI1970DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V SC70-6 | 0 | 3,000:$0.21750 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) N 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8.5A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 23.5 毫歐 @ 7A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 23nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 785pF @ 15V |
| 功率 - 最大: | 3.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |