分離式半導(dǎo)體產(chǎn)品 BSZ240N12NS3 G品牌、價格、PDF參數(shù)

BSZ240N12NS3 G • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSZ240N12NS3 G Infineon Technologies MOSFET N-CH 120V 37A TSDSON-8 9,995 1:$1.80000
10:$1.54100
25:$1.38680
100:$1.25830
250:$1.12992
500:$0.97584
1,000:$0.82176
2,500:$0.74472
BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 9,980 1:$1.56000
10:$1.39800
25:$1.23360
100:$1.11020
250:$0.96632
500:$0.86352
1,000:$0.67848
2,500:$0.63736
IPD530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO252-3 4,495 1:$1.79000
10:$1.60400
25:$1.41520
100:$1.27360
250:$1.10848
500:$0.99058
1,000:$0.77831
BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 9,980 1:$1.56000
10:$1.39800
25:$1.23360
100:$1.11020
250:$0.96632
500:$0.86352
1,000:$0.67848
2,500:$0.63736
IPD530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO252-3 2,500 2,500:$0.66038
5,000:$0.62736
12,500:$0.60142
25,000:$0.58491
62,500:$0.56604
BSZ240N12NS3 G • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 120V
電流 - 連續(xù)漏極(Id) @ 25° C: 37A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 24 毫歐 @ 20A，10V
Id 時的 Vgs(th)（最大）: 4V @ 35µA
閘電荷(Qg) @ Vgs: 27nC @ 10V
輸入電容 (Ciss) @ Vds: 1900pF @ 60V
功率 - 最大: 66W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應(yīng)商設(shè)備封裝: PG-TSDSON-8（3.3x3.3）
包裝: 剪切帶 (CT)