| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| STB21N65M5 | STMicroelectronics | MOSFET N-CH 650V 17A D2PAK | 0 | 1,000:$2.79300 2,000:$2.65335 5,000:$2.55360 10,000:$2.47380 25,000:$2.39400 |
| STW45N65M5 | STMicroelectronics | MOSF N CH 650V 35A TO247 | 434 | 1:$8.13000 10:$7.31300 25:$6.66240 100:$6.01250 250:$5.52500 500:$5.03750 1,000:$4.38750 2,500:$4.22500 5,000:$4.06250 |
| STH260N6F6-2 | STMicroelectronics | MOSFET N-CH 75V 180A H2PAK | 710 | 1:$6.91000 10:$6.19200 25:$5.56800 100:$5.06400 250:$4.58400 500:$4.10400 |
| STB34NM60N | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | 932 | 1:$8.00000 10:$7.19200 25:$6.54120 100:$5.92100 250:$5.42500 500:$4.96000 |
| STH260N6F6-2 | STMicroelectronics | MOSFET N-CH 75V 180A H2PAK | 710 | 1:$6.91000 10:$6.19200 25:$5.56800 100:$5.06400 250:$4.58400 500:$4.10400 |
| STB34NM60N | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | 0 | 1,000:$4.18500 2,000:$4.03000 5,000:$3.87500 10,000:$3.81300 25,000:$3.72000 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 17A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 190 毫歐 @ 8.5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 50nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1950pF @ 100V |
| 功率 - 最大: | 125W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 帶卷 (TR) |