| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSZ900N20NS3 G | Infineon Technologies | MOSFET N-CH 200V 15.2A 8TSDSON | 5,000 | 5,000:$0.84851 10,000:$0.81588 25,000:$0.79956 50,000:$0.78324 |
| BSC889N03LS G | Infineon Technologies | MOSFET N-CH 30V 45A TDSON-8 | 10,000 | 1:$0.95000 10:$0.85200 25:$0.75160 100:$0.67640 250:$0.58868 500:$0.52606 1,000:$0.41333 2,500:$0.38828 |
| BSC900N20NS3 G | Infineon Technologies | MOSFET N-CH 200V 15.2A 8TDSON | 9,040 | 1:$2.28000 10:$1.95800 25:$1.76240 100:$1.59910 250:$1.43596 500:$1.24014 1,000:$1.04432 2,500:$0.94642 |
| BSC900N20NS3 G | Infineon Technologies | MOSFET N-CH 200V 15.2A 8TDSON | 9,040 | 1:$2.28000 10:$1.95800 25:$1.76240 100:$1.59910 250:$1.43596 500:$1.24014 1,000:$1.04432 2,500:$0.94642 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 15.2A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 90 毫歐 @ 7.6A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 30µA |
| 閘電荷(Qg) @ Vgs: | 11.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 920pF @ 100V |
| 功率 - 最大: | 62.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TSDSON-8（3.3x3.3） |
| 包裝: | 帶卷 (TR) |