| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IPD122N10N3 G | Infineon Technologies | MOSFET N-CH 100V 59A TO252-3 | 5,000 | 1:$1.91000 10:$1.64100 25:$1.47680 100:$1.34020 250:$1.20340 500:$1.03930 1,000:$0.87520 |
| IPD122N10N3 G | Infineon Technologies | MOSFET N-CH 100V 59A TO252-3 | 5,000 | 2,500:$0.73845 5,000:$0.71110 12,500:$0.68375 25,000:$0.67008 62,500:$0.65640 |
| IPD034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | 2,500 | 2,500:$1.00184 5,000:$0.96473 12,500:$0.92762 25,000:$0.90907 62,500:$0.89052 |
| BSZ018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 22A TSDSON-8 | 9,638 | 1:$2.59000 10:$2.22000 25:$1.99760 100:$1.81280 250:$1.62780 500:$1.40582 1,000:$1.18384 2,500:$1.07286 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 59A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 12.2 毫歐 @ 46A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3.5V @ 46µA |
| 閘電荷(Qg) @ Vgs: | 35nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2500pF @ 50V |
| 功率 - 最大: | 94W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | PG-TO252-3 |
| 包裝: | 剪切帶 (CT) |