元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SI1056X-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-89-6 | 8,138 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
SI1056X-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-89-6 | 6,000 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 11,480 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 11,480 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 9,000 | 3,000:$0.16000 |
SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 3,000 | 3,000:$0.15500 6,000:$0.14500 15,000:$0.13500 30,000:$0.12750 75,000:$0.12500 150,000:$0.12000 |
SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 4,808 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門(mén) |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | - |
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 89 毫歐 @ 1.32A,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 950mV @ 250µA |
閘電荷(Qg) @ Vgs: | 8.7nC @ 5V |
輸入電容 (Ciss) @ Vds: | 400pF @ 10V |
功率 - 最大: | 236mW |
安裝類(lèi)型: | 表面貼裝 |
封裝/外殼: | SOT-563,SOT-666 |
供應(yīng)商設(shè)備封裝: | SC-89-6 |
包裝: | 剪切帶 (CT) |