| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 11,480 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SI1021R-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | 9,000 | 3,000:$0.16000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 4,364 | 1:$0.55000 25:$0.38520 100:$0.33000 250:$0.28500 500:$0.24500 1,000:$0.19000 |
| SI1422DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 4A SC70-6 | 3,000 | 3,000:$0.15500 6,000:$0.14500 15,000:$0.13500 30,000:$0.12750 75,000:$0.12500 150,000:$0.12000 |
| SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 6-TSOP | 4,808 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 190mA |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 4 歐姆 @ 500mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.7nC @ 15V |
| 輸入電容 (Ciss) @ Vds: | 23pF @ 25V |
| 功率 - 最大: | 250mW |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | SC-75A |
| 供應(yīng)商設(shè)備封裝: | SC-75A |
| 包裝: | 剪切帶 (CT) |