| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSH203,215 | NXP Semiconductors | MOSFET P-CH 30V 470MA SOT23 | 9,464 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
| BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,679 | 1:$0.54000 10:$0.37900 25:$0.31120 100:$0.24870 250:$0.18116 500:$0.14714 1,000:$0.11309 |
| BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 9,000 | 3,000:$0.19700 6,000:$0.18400 15,000:$0.17100 30,000:$0.16200 75,000:$0.15900 150,000:$0.15200 |
| BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,000 | 3,000:$0.09900 6,000:$0.09300 15,000:$0.08500 30,000:$0.08000 75,000:$0.07100 150,000:$0.06900 |
| BSH103,235 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 0 | 20,000:$0.09200 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 470mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 900 毫歐 @ 280mA，4.5V |
| Id 時的 Vgs(th)（最大）: | 680mV @ 1mA |
| 閘電荷(Qg) @ Vgs: | 2.2nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 110pF @ 24V |
| 功率 - 最大: | 417mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應(yīng)商設(shè)備封裝: | TO-236AB |
| 包裝: | 剪切帶 (CT) |