元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 9,000 | 3,000:$0.19700 6,000:$0.18400 15,000:$0.17100 30,000:$0.16200 75,000:$0.15900 150,000:$0.15200 |
BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,000 | 3,000:$0.09900 6,000:$0.09300 15,000:$0.08500 30,000:$0.08000 75,000:$0.07100 150,000:$0.06900 |
BSH103,235 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 0 | 20,000:$0.09200 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 1.9A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 120 毫歐 @ 1A,10V |
Id 時的 Vgs(th)(最大): | 2V @ 1mA |
閘電荷(Qg) @ Vgs: | 10nC @ 10V |
輸入電容 (Ciss) @ Vds: | 190pF @ 10V |
功率 - 最大: | 830mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | TO-236-3,SC-59,SOT-23-3 |
供應(yīng)商設(shè)備封裝: | TO-236AB |
包裝: | 帶卷 (TR) |