| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIHU5N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO251 IPAK | 0 | 3,000:$0.49518 6,000:$0.47042 15,000:$0.45097 30,000:$0.43859 75,000:$0.42444 |
| SI4427BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 9.7A 8SOIC | 0 | 2,500:$0.49420 |
| SI7136DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 30A PPAK 8SOIC | 0 | 3,000:$1.28250 |
| IRF710STRLPBF | Vishay Siliconix | MOSFET N-CH 400V 2.0A D2PAK | 0 | 800:$0.63578 |
| SI3445DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 6-TSOP | 0 | 3,000:$0.63000 |
| SI4354DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.61600 |
| SQD23N06-31L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$0.61460 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 500V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.3A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.5 歐姆 @ 2.5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 20nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 325pF @ 100V |
| 功率 - 最大: | 104W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-251-3 短引線，IPak，TO-251AA |
| 供應(yīng)商設(shè)備封裝: | TO-251AA |
| 包裝: | 帶卷 (TR) |