| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIR662DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A 8-SO PWRPAK | 0 | 1:$2.28000 25:$1.75520 100:$1.59250 250:$1.43000 500:$1.23500 1,000:$1.04000 |
| SQD50N03-09-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 50A TO252 | 0 | 2,000:$1.36192 |
| IRL630STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | 0 | 800:$1.33875 |
| SQ4470EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 16A 8SOIC | 0 | 2,500:$1.33650 |
| SQJ469EP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 80V 32A PPAK 8SOIC | 0 | 3,000:$1.28250 |
| SQJ461EP-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 60V TO252 | 0 | 3,000:$1.28250 |
| SQR40N10-25-GE3 | Vishay Siliconix | MOSFET N-CH D-S 100V TO263 | 0 | 2,000:$0.86535 |
| SI7138DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V PPAK 8SOIC | 0 | 3,000:$1.21230 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 60A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.7 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 96nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4390pF @ 30V |
| 功率 - 最大: | 104W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 剪切帶 (CT) |