| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 0 | 3,000:$0.23200 6,000:$0.21600 15,000:$0.20800 30,000:$0.20000 75,000:$0.19680 150,000:$0.19200 |
| IRF614STRRPBF | Vishay Siliconix | MOSFET N-CH 250V 2.7A D2PAK | 0 | 800:$0.88043 |
| IRF610STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | 0 | 800:$0.88043 |
| SIR662DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A 8-SO PWRPAK | 0 | 1:$2.28000 25:$1.75520 100:$1.59250 250:$1.43000 500:$1.23500 1,000:$1.04000 |
| SIR662DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A 8-SO PWRPAK | 0 | 3,000:$0.87750 6,000:$0.84500 15,000:$0.81250 30,000:$0.79625 75,000:$0.78000 |
| SI4423DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 0 | 2,500:$0.90585 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 8V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 12A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 9.4 毫歐 @ 15.7A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 800mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 25.2nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 1508pF @ 4V |
| 功率 - 最大: | 19W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SC-70-6 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SC-70-6 單 |
| 包裝: | 帶卷 (TR) |