參數(shù)資料
型號(hào): DV2805
廠商: ADVANCED SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: VHF POWER MOSFET N-Channel Enhancement Mode
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: 0.380 INCH, FM-4
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 15K
代理商: DV2805
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
(BR)DSS
V
GS
= 0 V I
DS
= 5.0 mA
I
DSS
V
DS
= 28 V V
GS
= 0 V
I
GSS
V
DS
= 0 V V
GS
= 40 V
V
GS
V
DS
= 10 V I
D
= 25 mA
G
M
V
DS
= 0.28 V I
D
= 150 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
80
---
UNITS
V
---
---
---
2.0
mA
μ
A
V
---
---
1.0
1.0
---
6.0
50
---
---
mmho
C
iss
C
oss
C
rss
V
GS
= 28 V V
DS
= 0 V F = 1.0 MHz
22
17
3.0
15
15
2.0
pF
P
G
η
D
V
DD
= 28 V I
DQ
= 25 mA P
OUT
= 5.0 W
f = 175 MHz
9.0
55
10
dB
%
VHF POWER MOSFET
N-Channel Enhancement Mode
DV2805
DESCRIPTION:
The
ASI DV2805
is Designed for
General Purpose Class A, B, or C
Power Amplifier Applications up to 175
MHz.
FEATURES:
P
G
= 04 dB Typ. at 5.0 W /175MHz
20-35 V operation
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
0.5 A
80 V
80 V
± 20 V
10 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
17.6 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
G
S
D
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