參數(shù)資料
型號: DTC114TKA
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 1071K
代理商: DTC114TKA
DTC114T
K
A
NPN Digital Transistor
Features
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Value
50
50
5
100
Unit
V
V
V
mA
Collector Dissipation
200
mW
Junction Temperature
T
J
150
Storage Temperature Range
T
STG
-55~150
Electrical Characteristics
Sym
Collector-Base Breakdown Voltage
(I
C
=50uA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=50uA, I
C
=0)
Collector Cut-off Current
(V
CB
=50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=4V, I
C
=0)
DC Current Gain
(V
CE
=5V, I
C
=1mA)
Collector-Emitter Saturation Voltage
(I
C
=10mA, I
B
=1mA)
R
1
Input Resistor
Transition Frequency
(V
CE
=10V, I
C
=-5mA, f=100MHz)
Parameter
Min
Typ
Max
Unit
V
(BR)CBO
50
---
---
V
V
(BR)CEO
50
---
---
V
V
(BR)EBO
5
---
---
V
I
CBO
---
---
0.5
uA
I
EBO
h
FE
100
300
600
---
V
CE(sat)
---
---
0.3
V
7
10
13
K
Ω
f
T
---
250
---
MHz
omp
onents
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Revision: 1 2005/06/29
---
---
0.5
uA
INCHES MM
MAX
.117
.112
.065
.038 .925 .975
.077
.0016
.0039
.044
.049
.006
.007
.013
.015
Suggested Solder
Pad Layout
DIM
A
B
C
D
E
G
H
J
K
MIN
.113
.108
.061
.036
.073
MIN
2.87
2.75
1.55
MAX
2.97
2.85
1.65
NOTE
1.85
.04
1.12 1.25
.14
.34 .37
1.95
.100
.17
A
B
C
D
E
G
H
J
K
.087
2.200
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
DIMENSIONS
SOT-23-3L
3
1
2
1. Base
2. Emitter
3. Collector
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