參數(shù)資料
型號(hào): DTB114EL-AE3-R
廠商: 友順科技股份有限公司
英文描述: DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
中文描述: 數(shù)字晶體管(內(nèi)置偏壓電阻)
文件頁數(shù): 2/3頁
文件大?。?/td> 108K
代理商: DTB114EL-AE3-R
DTB114E
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-042,B
2 of 3
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
P
D
T
J
T
STG
RATING
-50
-40~+10
-500
200
150
-55 ~ +150
UNIT
V
V
mA
mW
°
C
°
C
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified.)
PARAMETER
SYMBOL
V
IN(OFF)
V
IN(ON)
V
OUT(ON)
I
OUT
/I
IN
= - 0mA/- .5 mA
I
IN
V
IN
= -5V
I
OUT(OFF)
V
CC
= -50V , V
IN
=0V
h
FE
V
OUT
= -5V, I
OUT
= -5 mA
R
1
R
2
/R
1
f
T
V
CE
= -10 V, I
E
=5mA, f=100MHz
TEST CONDITIONS
V
CC
= -5V, I
OUT
= -100
V
OUT
= -0.3V, I
OUT
= -10mA
MIN
-3
56
7
0.8
TYP
-0.1
10
1
200
MAX
-0.5
-0.3
-0.88
-0.5
13
1.2
UNIT
A
Input Voltage
V
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
*Transition frequency of the device
V
mA
μA
k
MHz
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