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參數(shù)資料
| 型號(hào)： | DTA6-N |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 6A Bidirectional Thyristor |
| 中文描述： | 6A條雙向晶閘管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | DTA6-N |
DTA6-N
Ordering number : EN1874C
6A Bidirectional Thyristor
Silicon Planar Type
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1874-1/3
Features
Peak OFF-state voltage : 200 to 600V
RMS ON-state current : 6A
TO-220 package.
Absolute Maximum Ratings
at Ta=25°C
Repetitive Peak
OFF-StateVoltage
RMS ON-State Current
DTA6C-N DTA6E-N
200
DT6AG-N unit
600
V
DRM
400
V
I
T(RMS)
Tc=104°C, single-phase
full-wave
Peak 1 cycle, 50Hz
1ms
≤
t
≤
10ms
f
≥
50Hz, duty
≤
10%
→
→
6
A
Surge ON-State Current
Amperes Squared-Seconds
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Junction Temperature
Strage Temperature
Weght
I
TSM
∫
i
2
T·dt
P
GM
P
G(AV)
I
GM
V
GM
Tj
Tstg
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
–40 to +125 °C
→
60
18 A
2
s
5
0.5
±2
±10
125 °C
A
W
W
A
V
f
≥
50Hz, duty
≤
10%
f
≥
50Hz, duty
≤
10%
→
1.8
g
Electrical Characteristics
at Ta=25°C
Repetitive Peak
OFF-State Current
Peak ON-State Voltage
Critical Rate of Rise of
OFF-State Voltage
Holding Current
Gate Trigger Current
min
typ
max
unit
mA
I
DRM
Tj=125°C, V
D
=V
DRM
2
V
TM
dv/dt
I
TM
=9A
Tj=125°C, V
D
=200V (C),
400V (E to G)
R
L
=100
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
V
D
=12V, R
L
=20
Tc=125°C, V
D
=Rated voltage
Between junction and case, AC
1.5
V
10
V/μs
I
H
I
GT
I
GT
I
GT
I
GT
V
GT
V
GT
V
GT
V
GT
V
GD
Rth(j-c)
50
30
30
50
30
mA
mA
mA
mA
mA
V
V
V
V
V
°C/W
(I)
(II)
(III)
(IV)
Gate Trigger Voltage (I)
2
2
2
2
(II)
(III)
(IV)
Gate Nontrigger Voltage
Thermal Resistance
0.2
2
* : The gate trigger mode is shown below.
Package Dimensions
1155A
(unit : mm)
Trigger mode
I
II
III
IV
T2
+
+
–
–
T1
–
–
+
+
G
+
–
+
–
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