- 您現在的位置：買賣IC網 > PDF目錄377018 > DTA114T-AL3-R (UNISONIC TECHNOLOGIES CO LTD) DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) PDF資料下載
參數資料
| 型號： | DTA114T-AL3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-323, 3 PIN |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 168K |
| 代理商： | DTA114T-AL3-R |
DTA114T
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-061,B
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
200
150
+150
-55~+150
UNIT
V
V
V
mA
mW
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SOT-23
SOT-323/SOT-523
Collector Power Dissipation
P
C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIST ICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
C
=-10mA, I
B
=-1mA
I
CBO
V
CB
=-50V
I
EBO
V
EB
=-4V
h
FE
V
CE
=-5V, I
C
=-1mA
R
1
f
T
V
CE
=-10V, I
E
=5mA, f=100MHz*
TEST CONDITIONS
I
C
=-50
μ
A
I
C
=-1mA
I
E
=-50
μ
A
MIN
-50
-50
-5
100
7
TYP MAX
250
10
250
UNIT
V
V
V
V
μ
A
μ
A
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
-0.3
-0.5
-0.5
600
13
k
MHz
相關PDF資料 |
PDF描述 |
|---|---|
| DTA114T-AN3-R | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| DTA114TL-AE3-R | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| DTA114TL-AL3-R | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| DTA114TL-AN3-R | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| DTA114WA | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DTA114T-AN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| DTA114TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
| DTA114TCA | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Digital Transistor |
| DTA114-TCA | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:PNP Digital Transistor |
| DTA114TCA RF | 功能描述:兩極晶體管 - BJT Digital Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。