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參數(shù)資料
| 型號： | DT451AN |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 7.2 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 73K |
| 代理商： | DT451AN |
D
S
11606 Rev. C-4
2 of 4
DS451AN
Electrical Characteristics
25°C unless otherwise specified
Notes:
2. Pulse Test: Pulse width
l
300μs, duty cycle
l
2.0%.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
30
—
—
1.0
10
V
V
GS
= 0V, I
D
= 250μA
T
j
= 55°C
I
DSS
—
—
μA
VDS = 24V, V
GS
= 0V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSSF
I
GSSR
—
—
—
—
100
-100
nA
nA
V
GS
= 20V, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
T
j
= 125°C
V
GS(th)
-1.0
-0.7
1.6
1.2
0.030
0.042
0.042
0.058
3.0
2.2
0.035
0.070
0.055
0.100
V
VDS = V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
T
j
= 125°C
R
DS (ON)
—
V
GS
= 10V, I
D
= 7.2A
V
GS
= 4.5V, I
D
= 6.0A
On-State Drain Current
I
D(ON)
25
15
—
—
—
A
V
GS
= 10V, V
DS
= 5.0V
V
GS
= 4.5V, V
DS
= 5.0V
V
DS
= 10V, I
D
= 7.2A
Forward Transconductance
DYNAMIC CHACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
g
FS
11
—
m
C
ISS
C
OSS
C
RSS
—
—
—
720
370
250
—
—
—
pF
pF
pF
V
= 15V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
—
—
—
—
—
—
—
12
13
29
10
19
2.3
5.5
20
30
50
20
30
—
—
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10V, I
= 1.0A
V
GEN
= 10V, R
GEN
= 6.0
V
DS
= 10V, I
D
= 3.0A.
V
GS
= 10V
I
S
—
—
2.3
A
V
SD
—
0.9
1.3
V
V
GS
= 0V, I
S
= 7.2A (Note 2)
V
GS
= 0V, I
= 1.25A
dI
p
/dt = 100A/μS
Reverse Recovery Time
t
rr
—
—
100
ns
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