參數(shù)資料
型號: DT3055L
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 3.5 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 2/4頁
文件大小: 73K
代理商: DT3055L
D
S
11605 Rev. C-4
2 of 4
DT3055L
Electrical Characteristics
25°C unless otherwise specified
Notes:
2. Pulse Test: Pulse width
l
300μs, duty cycle
l
2.0%.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
60
1.0
50
V
V
GS
= 0V, I
D
= 250μA
T
j
=125°C
I
DSS
μA
VDS = 60V, V
GS
= 0V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSSF
I
GSSR
100
-100
nA
nA
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
T
j
= 125°C
V
GS(h)
1.0
0.6
1.7
1.3
0.105
0.17
2.0
1.6
0.12
0.24
0.10
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
T
j
= 125°C
R
DS (ON)
V
GS
= 4.5V, I
D
= 3.5A
V
GS
= 10V, ID = 3.9A
V
GS
= 5.0V, V
DS
= 10V
V
DS
= 5.0V, I
D
= 3.5A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Source-Drain Diode Forward Voltage
I
D(ON)
g
FS
10
6.0
A
m
C
ISS
C
OSS
C
RSS
435
120
30
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
8.0
4.0
24
7.0
13.5
1.5
4.0
20
20
50
20
20
3.0
8.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= 25V, I
D
= 1.0A
V
GS
= 10V, R
GEN
= 6.0
V
DS
= 40V. I
D
= 3.5A.
V
GS
= 10V
I
S
2.5
A
V
SD
0.86
1.2
V
V
GS
= 0V, I
S
= 1.5A (Note 2)
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