參數(shù)資料
型號: DT3055
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 2/4頁
文件大?。?/td> 73K
代理商: DT3055
D
S
11604 Rev. C-4
2 of 4
DT3055
Electrical Characteristics
25°C unless otherwise specified
Notes:
2. Pulse Test: Pulse width
l
300μs, duty cycle
l
2.0%.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
60
10
100
100
-100
V
V
GS
= 0V, I
D
= 250μA
T
j
=125°C
IDSS
μA
V
DS
= 48V, V
GS
= 0V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSSF
I
GSSR
nA
nA
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
T
j = 100°C
VGS(th)
2.0
1.5
2.9
2.3
0.075
0.13
4.0
3.0
0.10
0.22
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
T
j
= 125°C
R
DS (ON)
V
GS
= 10V, I
D
= 4.0A
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Source-Drain Diode Forward Voltage
I
D(ON)
g
FS
15
3.5
A
V
GS
= 10V. V
DS
= 10V
V
DS
= 15V, I
D
= 4.0A
m
C
ISS
C
OSS
C
RSS
350
135
40
pF
pF
pF
V
= 30V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
18
25
43
34
10
2.0
6.0
25
50
65
60
15
4.0
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= 25V, I
D
= 1.2A
V
GS
= 10V, R
GEN
= 50
V
DS
= 40V. I
D
= 4.0A.
V
GS
= 10V
I
S
2.5
A
V
SD
1.2
V
V
GS
= 0V, I
S
= 4.0A (Note 2)
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